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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1017 DESCRIPTION With TO-220Fa package Complement to type 2SD1408 APPLICATIONS For power amplifications Recommended for 20-25W high-fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Emitter Collector Base DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER ANG INCH Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Collector-base voltage EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE -80 -80 -5 -4 -0.4 UNIT V V V A A Ta=25ae PC TC=25ae Tj Tstg Junction temperature Storage temperature 2.0 W 25 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SB1017 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 -80 V VCEsat VBE Collector-emitter saturation voltage IC=-3A; IB=-0.3A IC=-3A ;VCE=-5V -1.0 -1.7 V Base-emitter on voltage -1.0 -1.5 V ICBO Collector cut-off current VCB=-80V; IE=0 -30 |I A IEBO Emitter cut-off current VEB=-5V; IC=0 -100 |I A hFE-1 DC current gain IC=-0.5A ; VCE=-5V 40 240 hFE-2 DC current gain fT COB Transition frequency Collector output capacitance O IC=-3A ; VCE=-5V 15 IC=-0.5A; VCE=-5V hFE-1 Classifications R 40-80 IN 70-140 ANG CH Y 120-240 EMIC ES IE=0, f=1MHz ; VCB=-10V DUC ON 9 130 TOR MHz pF 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1017 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1017 SEM GE HAN INC OND IC TOR UC 4 |
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